SD1534-08 Datasheet | STMicroelectronics

DESCRIPTION The SD1534-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1534-08 is packaged in the .280” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 5.5 218.7 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 °C/W 1/3 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES h FE IC = 10m A IC = 25m A IE = 10m A VCE = 50V VCE = 5V IE = 0m A VBE = 0V IC = 0m A IE = 0m A IC = 100m A 65 65 3.5 - 10 - - - - - - - - 5 200 V V V m A - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1025 - 1150MHz PIN = 13.5 W f = 1025 - 1150MHz PIN = 13.5 W VCE = 50 V VCE = 50 V 75 7.5 - - - - W d B Pulse W idth = 10µ Sec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi...