SD1530-08
SD1530-08 is RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-08 is packaged in the .250” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 2.6 87.5 +200
- 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
August 1993
°C/W
1/5
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BV CES BVEBO ICES h FE
IC = 10 m A IC = 25 m A IE = 1 m A VCE = 50 V VCE = 5 V
IE = 0 m A VBE = 0 V IC = 0 m A IE = 0 m A IC = 500 m A
65 65 3.5
- 10
- -
- -
- -
- - 5 200
V V V m A
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT PG ηc
Note: f = 1025
- 1150 MHz PIN = 5.0 W f = 1025
- 1150 MHz PIN = 5.0 W f = 1025
- 1150 MHz PIN = 5.0 W
VCE = 50 V VCE = 50 V VCE = 50 V
35 8.5 30
- -
- -
- -
W d B...
