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SD2931-10 - RF POWER TRANSISTORS

General Description

The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor.

Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz.

Key Features

  • Gold metalization.
  • Excellent thermal stability.
  • Common source configuration Order code Marking Table 1. Device summary Base qty. Package SD2931-10W SD2931-10 25 pcs M174 1. For more details please refer to Chapter 11: Marking, packing and shipping specifications. July 2016 This is information on a product in full production. DocID7076 Rev 10 Packaging(1) Plastic tray 1/19 www. st. com Contents Contents SD2931-10 1 Electrical data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data • POUT = 150 W min. with 14 dB gain @ 175 MHz • Thermally enhanced packaging for lower junction temperatures M174 Epoxy sealed Figure 1. Pin connection 41 Description The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. 3 1. Drain 2. Source 2 3. Gate 4.