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SD2933 - HF/VHF/UHF RF power N-channel MOSFET

General Description

The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150 MHz.

Its special low thermal resistance package makes it ideal for ISM applications, where reliability and ruggedness are critical factors.

1.

Key Features

  • Gold metalization.
  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 300 W min. with 20 dB gain @ 30 MHz.
  • Thermally enhanced packaging for lower junction temperatures.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD2933 HF/VHF/UHF RF power N-channel MOSFETs M177 Epoxy sealed Figure 1. Pin connection 41 Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower junction temperatures Description The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150 MHz. Its special low thermal resistance package makes it ideal for ISM applications, where reliability and ruggedness are critical factors. 5 3 1. Drain 2. Source 2 3. Gate 4, 5. Source Table 1. Device summary Order code Marking Package SD2933W SD2933(1) M177 1.