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STB130NS04ZB-1 - N-channel Power MOSFET

Datasheet Summary

Description

This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout.

Features

  • 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram.
  • Designed for automotive.

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Datasheet Details

Part number STB130NS04ZB-1
Manufacturer STMicroelectronics
File Size 515.27 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB130NS04ZB-1 Datasheet
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STB130NS04ZB-1 Automotive-grade N-channel clamped, 7 mΩ typ., 80 A fully protected Mesh overlay™ Power MOSFET in a I2PAK package Datasheet - production data Features 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C maximum junction temperature Applications • High switching current • Linear applications Description This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout.
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