Datasheet4U Logo Datasheet4U.com

STB130NS04ZB-1 - N-channel Power MOSFET

General Description

This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout.

Key Features

  • 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram.
  • Designed for automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB130N6F7 N-channel Power MOSFET STMicroelectronics
STB130N6F7-2 N-Channel MOSFET INCHANGE
STB13N60M2 N-channel MOSFET STMicroelectronics
STB13N80K5 N-channel Power MOSFET STMicroelectronics
STB13NK60ZT4 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB130NS04ZB N-channel Power MOSFET
STB130NH02L N-channel Power MOSFET
STB13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STB13005-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STB13007DT4 High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB130NS04ZB-1 Automotive-grade N-channel clamped, 7 mΩ typ., 80 A fully protected Mesh overlay™ Power MOSFET in a I2PAK package Datasheet - production data Features 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C maximum junction temperature Applications • High switching current • Linear applications Description This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout.