STB130NS04ZB Datasheet | STMicroelectronics

Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE TO-220 D²PAK DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced pany’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also remended. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH SWITCHING CURRENT s LINEAR APPLICATIONS Table 2: Order Codes Sales Type STP130NS04ZB STB130NS04ZBT4 STW130NS04ZB Marking P130NS04ZB B130NS04ZB W130NS04ZB Package TO-220 D²PAK TO-247 Packaging TUBE TAPE & REEL TUBE Rev. 2 February 2005 1/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 3: Absolute Maximum ratings Symbol VDS VDG VGS ID ID IDG IGS IDM ( ) PTOT VESD(G-S) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-Source ESD(HBM-C=100 p F, R=1.5 KΩ) Max Operating Junction Temperature Storage Temperature Value CLAMPED CLAMPED CLAMPED 80 60 ± 50 ± 50 320 300 2.0 4 -55 to 175 Unit V V V A A m A m A A W W/°C KV °C ( ) Pulse width limited by safe operating area Table 4: Thermal Data TO-220 Rthj-case Rthj-pcb (- ) Rthj-a Tl Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max Max -62.5...