Datasheet4U Logo Datasheet4U.com

STB130NS04ZB - N-channel Power MOSFET

General Description

This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.

Key Features

  • TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 3 1 2 VDSS.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB130N6F7 N-channel Power MOSFET STMicroelectronics
STB130N6F7-2 N-Channel MOSFET INCHANGE
STB13N60M2 N-channel MOSFET STMicroelectronics
STB13N80K5 N-channel Power MOSFET STMicroelectronics
STB13NK60ZT4 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB130NS04ZB-1 N-channel Power MOSFET
STB130NH02L N-channel Power MOSFET
STB13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STB13005-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STB13007DT4 High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY™ MOSFET Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE 1 TO-220 D²PAK DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.