STB16NK60Z-S Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES ORDER CODE PART NUMBER STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE March 2004 1/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C= 100p F, R= 1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 600 600 ± 30 14 8.8 56 190 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220/ I²SPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 0.66 50 TO-247 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 14 360 Unit A m J GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1m A (Open Drain) Min. 30 Typ....