STB16NK65Z-S Datasheet | STMicroelectronics

Features TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 Ω < 0.50 Ω TYPICAL RDS(on) = 0.38Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 3 1 2 TO-220 I²SPAK DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STP16NK65Z STB16NK65Z-S MARKING P16NK65Z B16NK65Z PACKAGE TO-220 I²SPAK PACKAGING TUBE TUBE Rev. 3 September 2005 1/12 STP16NK65Z - STB16NK65Z-S Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM (- ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source EDS (HBM-C=100p F, R=1.5kΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 650 650 ± 30 13 8.19 52 190 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C (- ) Pulse width limited by safe operating area (1) ISD ≤ 13 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,T j ≤ T JMAX Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.66 62.5 300 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or...