STB36NF03L Datasheet | STMicroelectronics

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(- ) Ptot Tstg Tj February 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 18 36 25 144 75 0.5 -65 to 175 175 Unit V V V A A A W W/°C °C °C 1/7 (- ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 2 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 18V IGSS ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance...