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STB36NF06L - N-CHANNEL Power MOSFET

General Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V.
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB36NF06L, STP36NF06L Datasheet Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) Features Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.