STB60NF03L Datasheet | STMicroelectronics

ON This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( - ) P tot E AS ( 1 ) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 60 42 240 100 0.67 650 -65 to 175 175 ( 1) starting Tj = 25 o C, ID = 30A , VDD = 20V Un it V V V A A A W W /o C m J o o C C 1/6 (- ) Pulse width limited by safe operating area September 1999 THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 1.5 62.5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA n A V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c =125 o C ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 4.5V Test Con ditions ID = 250 µ A ID = 30 A ID = 30 A 60 Min. 1 Typ. 1.5 0.008...