STB60NF06L Datasheet | STMicroelectronics

FET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter STB60NF06L STP60NF06L VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS (2) VISO Tstg Tj due to Rth value Value STP60NF06LFP 60 60 ± 15 60 42 240 110 0.73 20 320 ------55 to 175 (1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, T j ≤ TJMAX. (2) Starting T j = 25 o C, ID = 30A, VDD = 30V Unit Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature 60(- ) 42(- ) 240(- ) 30 0.2 V V V A A A W W/°C V/ns m J V °C (- ) Pulse width limited by safe operating area. (- ) Refer to SOA for the max allowable current values on FP-type July 2003 . 1/11 STB60NF06L STP60NF06L/FP THERMAL DATA D2PAK TO-220 Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max Max 1.36 62.5 35 300 TO-220FP 5.0 °C/W °C/W °C/W °C (#)Only for SMD, When Mounted on 1 inch2 FR-4 board, 2 oz of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS =...