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®
STD16NE06
N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET™ POWER MOSFET
TYPE STD16NE06
s s s s
V DSS 60 V
R DS(on) < 0.085 Ω
ID 16 A
s
s
TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 2 1
1 3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.