STD16NE06 Datasheet | STMicroelectronics

® - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STrip FET™ POWER MOSFET TYPE STD16NE06 s s s s V DSS 60 V R DS(on) < 0.085 Ω ID 16 A s s TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 2 1 1 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STrip FET™” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( - ) P tot dv/dt Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 20 16 11 64 40 0.26 7 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o (- ) Pulse width limited by safe operating area February 2000 1/9 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 3.75 100 1.5...