STD16NE06L Datasheet | STMicroelectronics

ON This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( - ) P tot dv/dt T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 16 11 64 40 0.3 7 -65 to 175 175 (1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (- ) Pulse width limited by safe operating area THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.75 100 1.5 275 C/W o C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 35 V) Max Value 16 60 Unit A m J ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA n A Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c...