STD16NE06L
STD16NE06L is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
®
- CHANNEL 60V
- 0.07 Ω
- 16A
- DPAK STrip FET™ " POWER MOSFET
PRELIMINARY DATA
TYPE STD16NE06L s s s s s
V DSS 60 V
R DS(on) < 0.085 Ω
ID 16 A s
TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 o C APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES
3 1
DPAK TO-252
(Suffix "T4")
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (
- ) P tot dv/dt T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o
Value 60 60 ± 20 16 11 64 40 0.3 7 -65 to 175 175
(1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns o o
C C 1/5
(- ) Pulse width limited by safe operating area
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
3.75 100 1.5...
