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STD16NE10 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing re

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® STD16NE10 N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET™ MOSFET TYPE ST D16NE10 s s s s s V DSS 100 V R DS(on) < 0.1 Ω ID 16 A s s TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 2 1 1 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.