STD16NE10
STD16NE10 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
®
- CHANNEL 100V
- 0.07Ω
- 16A
- IPAK/DPAK STrip FET™ MOSFET
TYPE ST D16NE10 s s s s s
V DSS 100 V
R DS(on) < 0.1 Ω
ID 16 A s s
TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 2 1
1 3
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVERS,etc.) s DC-DC & DC-ACCONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (
- ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt( 1 ) T stg Tj July 1998 Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o
IPAK TO-251 (Suffix ”-1”)
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value 100 100 ± 20 16 11 64 50 0.33 7 -65 to 175 175
( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V A A A W W/ o C V/ ns o o
C C 1/9
(- ) Pulse width limited by safe operating area
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
3.0 100 1.5...