STD16NE10 Datasheet | STMicroelectronics

® - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STrip FET™ MOSFET TYPE ST D16NE10 s s s s s V DSS 100 V R DS(on) < 0.1 Ω ID 16 A s s TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 2 1 1 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVERS,etc.) s DC-DC & DC-ACCONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( - ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt( 1 ) T stg Tj July 1998 Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 20 16 11 64 50 0.33 7 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C 1/9 (- ) Pulse width limited by safe operating area THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.0 100 1.5...