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®
STD16NE10L
N - CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STD16NE10L
s s s s s s s
V DSS 100 V
R DS(o n) < 0.10 Ω
ID 16 A
TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STD16NE10L Datasheet
