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N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK PowerMesh™II MOSFET
TYPE STD2NC50 STD2NC50-1
s s s s s
STD2NC50 STD2NC50-1
VDSS 500 V 500 V
RDS(on) <4Ω <4Ω
ID 2.2 A 2.2 A
TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1 1 3 2
DPAK
IPAK
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.