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N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh™II MOSFET
TYPE STD2NC60
s s s s s
STD2NC60
VDSS 600V
RDS(on) < 3.6Ω
ID 2A
TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1
DPAK IPAK
1
3 2
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.