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STD3NK50Z-1 - N-Channel MOSFET

Download the STD3NK50Z-1 datasheet PDF. This datasheet also covers the STD3NK50Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDSS RDS(on) max. STD3NK50Z-1 STD3NK50ZT4 500 V 3.3 Ω.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected PTOT 45 W Package IPAK DPAK G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD3NK50Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD3NK50Z-1, STD3NK50ZT4 Datasheet N-channel 500 V, 2.8 Ω typ., 2.3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages TAB 3 IPAK 12 D(2, TAB) TAB 23 1 DPAK Features Order codes VDSS RDS(on) max. STD3NK50Z-1 STD3NK50ZT4 500 V 3.3 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Applications • Switching applications S(3) AM01475V1 Product status link STD3NK50Z-1 STD3NK50ZT4 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.