STD3NK60Z-1 Datasheet | STMicroelectronics

ures Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected ID 2.4 A Package D2PAK IPAK DPAK TO-220 TO-220FP Applications S(3) AM01475V1 - Switching applications Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the Super MESH™ technology by STMicroelectronics, an optimization of the well-established Power MESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2912 - Rev 6 - August 2018 For further information contact your local STMicroelectronics sales office. .st. STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum...