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STD3NK60Z-1 - N-CHANNEL Power MOSFET

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected ID 2.4 A Package D2PAK IPAK DPAK TO-220 TO-220FP.

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Other Datasheets by STMicroelectronics

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STD3NK60Z N-CHANNEL Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB 13 D2PAK TAB TAB TAB 23 1 DPAK IPAK 3 12 1 23 TO-220 123 TO-220FP D(2, TAB) G(1) Features Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 2.