STDD15-07P6 Datasheet | STMicroelectronics

.. ® LOW CAPACITANCE DETECTION DIODE PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS s s 10 m A 15 V 150 °C 0.51 V SOT-666 s s s Low diode capacitance Device designed for RF application Low profile package 40% space saving versus SOT-323 Very low parasitic inductor & resistor SCHEMATIC DIAGRAM DESCRIPTION The STDD15-07P6 is a dual diode series for the detection of a RF signal and the pensation of the voltage drift with the temperature. The SOT-666 package makes the device ideal in application where the space saving is critical like mobile phones. The low junction capacitance will reduce the disturbance on the RF signal. 6 5 4 Parallel configuration STDD15-07P6 2 3 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Tstg Tj Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Half wave, single phase, 60Hz Value 15 10 2 - 65 + 150 150 Unit V m A A °C °C November 2003 - Ed: 1A 1/3 THERMAL PARAMETERS Symbol Rth (j-a)- Junction to ambient Parameter Value 400 Unit °C/W - : Mounted with minimum remended pad size, PC board FR4. STATIC ELECTRICAL CHARACTERISTICS Symbol IR- Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V F- Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C - Pulse test: tp ≤ 250µs, δ ≤ 2% Min. Typ. Max. 0.035 Unit µA VR = 1V 6 VR = 15V 20 IF = 1 m A 350 230 IF = 10 m A 500 460 30 0.23 100 380 260 570 510 m V µA ELECTRICAL CHARACTERISTICS Symbol CT RF Ls Parameter Diode capacitance Forward resistance Series inductance Tests conditions VR = 0 V IF = 5 m A F = 1MHz F = 100MHz 15 1.5 Min. Typ. Max. 1.0 Unit p F Ω n...