STDD15 Datasheet | STMicroelectronics

® STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS s s 10 m A 15 V 150 °C 0.51 V SOT323-3L STDD15-xx W SOT323-6L STDD15-xx S s s s Low diode capacitance Device designed for RF application Low profile package Available in 3 configurations Very low parasitic inductor & resistor SCHEMATIC DIAGRAM 1 3 2 Series configuration STDD15-04W DESCRIPTION The STDD15 is a dual diode series for the detection of a RF signal and the pensation of the voltage drift with the temperature. The SOT323 package makes the device ideal in application where the space saving is critical like mobile phones. The low junction capacitance will reduce the disturbance on the RF signal 1 2 3 4 5 6 Parallel configuration STDD15-07S 1 3 2 mon cathode configuration STDD15-05W ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Tstg Tj Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10ms Value 15 10 2 - 65 + 150 150 Unit V m A A °C °C August 2002 - Ed: 3A 1/6 STDD15 series THERMAL PARAMETERS Symbol Rth (j-a)- Junction to ambient Parameter Value 500 Unit °C/W - : Mounted with minimum remended pad size, PC board FR4. STATIC ELECTRICAL CHARACTERISTICS Symbol IR- Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V F- Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C - Pulse test: tp ≤ 250µs, Delta ≤ 2% Min. Typ. Max. 0.035 Unit µA VR = 1V 6 VR = 15V 10 IF = 1 m A 350 230 IF = 10 m A 500 450 30 0.23 100 380 260 570 510 m V µA ELECTRICAL CHARACTERISTICS Symbol C RF Ls Parameter Diode capacitance Forward resistance Series inductance Tests conditions VR = 0 V IF = 5 m A F = 1MHz F = 100MHz 15 1.5 Min. Typ. Max. 1.0 Unit p F Ω n...