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STGB3NB60HD - N-CHANNEL IGBT

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.

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® STGB3NB60HD N-CHANNEL 3A - 600V TO-263 PowerMESH™ IGBT T YPE STGB3NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 3 A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 D2PAK TO-263 (Suffix ”T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
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