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STGB3NB60HD Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: ® STGB3NB60HD N-CHANNEL 3A - 600V TO-263 PowerMESH™ IGBT T YPE STGB3NB60HD s V CES 600 V V CE(sat) < 2.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.

The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V GE IC IC I CM ( • ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max.

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