STGB10HF60KD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STGB10HF60KD Key Features
- Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction su