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STGB10HF60KD - Short-circuit Rugged IGBT

Datasheet Summary

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Table 1.

Features

  • Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 3 1 3 1 2 1 3 2 TO-220FP TAB TAB TO-220.

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Datasheet Details

Part number STGB10HF60KD
Manufacturer STMicroelectronics
File Size 449.33 KB
Description Short-circuit Rugged IGBT
Datasheet download datasheet STGB10HF60KD Datasheet
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www.DataSheet4U.com STGB10HF60KD, STGD10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Preliminary data Features ■ ■ ■ ■ ■ ■ Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 3 1 3 1 2 1 3 2 TO-220FP TAB TAB TO-220 Applications ■ ■ ■ 3 1 DPAK Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. D2PAK Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1.
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