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STGB10NB60S - low drop IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S s Figure 1: Package IC @100°C 10 A 10 A 10 A 1 2 VCES 600 V 600 V 600 V VCE(sat) (Max) @25°C < 1.7 V < 1.7 V < 1.7 V 3 1 2 3 s s s HIGHT INPUT.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT Table 1: General Features TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S s Figure 1: Package IC @100°C 10 A 10 A 10 A 1 2 VCES 600 V 600 V 600 V VCE(sat) (Max) @25°C < 1.7 V < 1.7 V < 1.7 V 3 1 2 3 s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT TO-220FP TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).