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STGB10NB37LZ - IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Key Features

  • Low threshold voltage.
  • Low on-voltage drop.
  • Low gate charge.
  • High current capability.
  • High voltage clamping feature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features ■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. TAB 3 2 1 TO-220 TAB 3 1 D²PAK Figure 1. Internal schematic diagram C (2,TAB) G (1) Table 1.