STGB3NB60SD Datasheet | STMicroelectronics

N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT TYPE STGB3NB60SD s VCES 600 V VCE(sat) <1.5 V Ic 3A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (suffix“T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1k Hz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR...