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STGB3NB60SD Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: STGB3NB60SD N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT TYPE STGB3NB60SD s VCES 600 V VCE(sat) <1.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.

The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM(•) Ptot Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuos) at Tc=25°C Collector Current (continuos)at Tc=100°C Collector Current (pulsed) Total Dissipation at Tc = 25°C Derating Factor Storage Temperature Max.

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