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STGB7NB40LZ Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: STGB7NB40LZ N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB7NB40LZ s s s s s s VCES CLAMPED VCE(sat) < 1.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC RG PTOT ECL EECAV Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 100°C Minimum External Gate Resistor Total Dissipation at TC = 25°C Derating Factor Single Pulse Collector to Emitter Avalanche Energy IC= 13 A ;

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