Datasheet4U Logo Datasheet4U.com

STH15NA50FI - N-CHANNEL Power MOS MOSFET

Download the STH15NA50FI datasheet PDF. This datasheet also covers the STH15NA50 variant, as both devices belong to the same n-channel power mos mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH15NA50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STH15N50 N-CHANNEL Power MOS MOSFET STMicroelectronics
STH15N50FI N-CHANNEL Power MOS MOSFET STMicroelectronics
STH150N10F7-2 N-CHANNEL POWER MOSFET STMicroelectronics
STH150N10F7-2 N-Channel MOSFET INCHANGE
STH15810-2 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STH15NA50 N-CHANNEL Power MOS MOSFET
STH15NB50 N-CHANNEL Power MOS MOSFET
STH15NB50FI N-CHANNEL Power MOS MOSFET
STH10NA50 N-CHANNEL Power MOS MOSFET
STH10NA50FI N-CHANNEL Power MOS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH15NA50 STH15NA50FI STW15NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218 1 3 2 1 3 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.