STH15NB50 Datasheet | STMicroelectronics

® STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W15NB50 ST H15NB50FI s s s s s s V DSS 500 V 500 V R DS(on) < 0.36 Ω < 0.36 Ω ID 14.6 A 10.5 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional...