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STH15NB50 Datasheet N-channel Power Mos MOSFET

Manufacturer: STMicroelectronics

Overview: ® STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W15NB50 ST H15NB50FI s s s s s s V DSS 500 V 500 V R DS(on) < 0.36 Ω < 0.36 Ω ID 14.6 A 10.5 A TYPICAL RDS(on) = 0.

General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) V ISO T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max.

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