STH6NA80FI datasheet by STMicroelectronics.
| Part number | STH6NA80FI |
|---|---|
| Datasheet | STH6NA80FI_STMicroelectronics.pdf |
| File Size | 138.87 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL MOS TRANSISTOR |
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Unit V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (VDS = 0) V GS = ± 30 V Tc = 100 o C ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 µ A Min. 3 1.8 T c = 100 C 5.4 o Max. 3.75 2.2 4.4 Unit V Ω Ω A Static Drain-source O n V GS = 10 V ID = 3 A Resistance V GS = 10 V I D = 3 A...
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