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STL60N32N3LL - Power MOSFETs

General Description

This product utilizes latest generations of design rules of ST’s proprietary STripFET™ V and STripFET™ VI DeepGATE technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is

Key Features

  • Type STL60N32N3LL.
  • VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™5x6 asymmetrical double island.

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www.DataSheet4U.com STL60N32N3LL Dual N-channel 30 V, 0.006 Ω, 15 A PowerFLAT™5x6 asymmetrical double island, STripFET™ Power MOSFET Target specification Features Type STL60N32N3LL ■ ■ ■ ■ ■ VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™5x6 asymmetrical double island Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes latest generations of design rules of ST’s proprietary STripFET™ V and STripFET™ VI DeepGATE technology.