STL60N32N3LL Datasheet | STMicroelectronics

.. Dual N-channel 30 V, 0.006 Ω, 15 A Power FLAT™5x6 asymmetrical double island, STrip FET™ Power MOSFET Target specification Features Type STL60N32N3LL - - - - - VDSS Q1 Q2 30 V 30 V RDS(on) < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Power FLAT™5x6 asymmetrical double island Application - Switching applications Figure 1. Internal schematic diagram Description This product utilizes latest generations of design rules of ST’s proprietary STrip FET™ V and STrip FET™ VI Deep GATE technology. The lowest available RDS(on)- Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 $ 3 $ 3 $ 1 '...