STL80N3LLH6 Datasheet | STMicroelectronics

N-channel 30 V, 0.0042 Ω , 21 A PowerFLAT™(5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type STL80N3LLH6 VDSS 30 V RDS(on) max 0.005 Ω ID 21 A (1) 1. The value is rated according Rthj-pcb - - - - - RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 5x6 ) Application - Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all...