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STL80N3LLH6 - Power MOSFET

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Type STL80N3LLH6 VDSS 30 V RDS(on) max 0.005 Ω ID 21 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 5x6 ).

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STL80N3LLH6 N-channel 30 V, 0.0042 Ω , 21 A PowerFLAT™(5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type STL80N3LLH6 VDSS 30 V RDS(on) max 0.005 Ω ID 21 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 5x6 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. www.DataSheet4U.com Table 1.