STL80N3LLH6 Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STL80N3LLH6 Key Features
- RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low
- Switching