Datasheet Details
| Part number | STP12NB30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 56.52 KB |
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Datasheet | STP12NB30_STMicroelectronics.pdf |
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Overview: STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.40 Ω < 0.40 Ω ID 12A 6.5 A TYPICAL RDS(on) = 0.
| Part number | STP12NB30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 56.52 KB |
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Datasheet | STP12NB30_STMicroelectronics.pdf |
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Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max.
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