STP12NK30Z - N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET

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ST Microelectronics

Part number	STP12NK30Z
Manufacturer	STMicroelectronics
File Size	283.40 KB
Description	N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET
Datasheet	STP12NK30Z Datasheet
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The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 STP12NK30Z.

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Published: Jul 8, 2005 |