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STP3NC90ZFP - N-CHANNEL MOSFET

Download the STP3NC90ZFP datasheet PDF. This datasheet also covers the STP3NC90Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/11 www. Dat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP3NC90Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP3NC90Z N-CHANNEL MOSFET
STP3NC50 N-CHANNEL MOSFET
STP3NC60 N-CHANNEL MOSFET
STP3NC60FP N-CHANNEL MOSFET
STP3NC70Z N-CHANNEL MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP3NC90Z/FP STB3NC90Z-1 s s STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 VDSS 900V 900V RDS(on) < 3.5Ω < 3.5Ω ID 3.5 A 3.5 A 3 1 2 s s s TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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