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STP4N62K3 Datasheet Supermesh3 Power MOSFET

Manufacturer: STMicroelectronics

Overview: .. STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 Ω, 3.

General Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology bined with a new optimized vertical structure.

The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Table 1.

Key Features

  • Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3.
  • VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. I²PAK 3 12 1 2 TO-220.

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