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STP9NB60 Datasheet PowerMesh MOSFET

Manufacturer: STMicroelectronics

Download the STP9NB60 datasheet PDF. This datasheet also includes the STP-9NB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STP-9NB-60.pdf) that lists specifications for multiple related part numbers.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor dv/dt( 1 ) Peak Diode Recovery voltage slope V ISO Ts tg Tj Insulation Withstand Voltage (DC) Storage Temperature Max.

Overview

® STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET TYPE ST P9NB60 ST P9NB60FP s s s s s V DSS 600 V 600 V R DS(on) < 0.8 Ω < 0.8 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.

More Datasheets from STMicroelectronics

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