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STP9NB60 - PowerMesh MOSFET

This page provides the datasheet information for the STP9NB60, a member of the STP-9NB PowerMesh MOSFET family.

Datasheet Summary

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet preview – STP9NB60

Datasheet Details

Part number STP9NB60
Manufacturer STMicroelectronics
File Size 108.95 KB
Description PowerMesh MOSFET
Datasheet download datasheet STP9NB60 Datasheet
Additional preview pages of the STP9NB60 datasheet.

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Other Datasheets by ST Microelectronics
  • STP9NB50 - PowerMesh MOSFET
  • STP9NB50FP - PowerMesh MOSFET
  • STP9NC60 - N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET
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Full PDF Text Transcription

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® STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET TYPE ST P9NB60 ST P9NB60FP s s s s s V DSS 600 V 600 V R DS(on) < 0.8 Ω < 0.8 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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