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STPSC1206 Datasheet 600v Power Schottky Silicon Carbide Diode

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STPSC1206 600 V power Schottky silicon carbide.

General Description

These diodes are manufactured using silicon carbide substrate.

This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating.

Such diodes exhibit no or negligible recovery characteristics.

Key Features

  • No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode.

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