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STPSC12065 Datasheet 650v Power Schottky Silicon Carbide Diode

Manufacturer: STMicroelectronics

Overview: STPSC12065 Datasheet 650 V, 12 A power Schottky silicon carbide diode K K KA NC D²PAK K A K AA NC D²PAK HV A K TO-220AC Product.

General Description

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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