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STPSC12065-Y Datasheet Automotive 650v 12a Silicon Carbide Power Schottky Diode

Manufacturer: STMicroelectronics

Overview: STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product label Product status link STPSC12065-Y Product summary IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.

General Description

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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