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STPSC12065-Y - Automotive 650V 12A silicon carbide power Schottky diode

General Description

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product label Product status link STPSC12065-Y Product summary IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • PPAP capable • Operating Tj from -40 °C to 175 °C • VRRM guaranteed from -40 to +175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant Applications • On board charger Description The SiC diode is an ultra high performance power Schottky diode.