Datasheet Details
| Part number | STPSC12065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 453.80 KB |
| Description | Automotive 650V 12A silicon carbide power Schottky diode |
| Datasheet |
 STPSC12065-Y Datasheet
|
|
|
| Part number | STPSC12065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 453.80 KB |
| Description | Automotive 650V 12A silicon carbide power Schottky diode |
| Datasheet |
STPSC12065-Y Datasheet
|
|
|
|
The SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.