• Part: STPSC12C065-Y
  • Description: Automotive 650V power Schottky silicon carbide diode
  • Manufacturer: STMicroelectronics
  • Size: 160.96 KB
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STMicroelectronics
STPSC12C065-Y
STPSC12C065-Y is Automotive 650V power Schottky silicon carbide diode manufactured by STMicroelectronics.
Automotive 650 V power Schottky silicon carbide diode $ . . 72$& $ . Features - No or negligible reverse recovery - Switching behavior independent of temperature - Dedicated to PFC applications - High forward surge capability - AEC-Q101 qualified - PPAP capable - ECOPACK®2 pliant ponent - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal...