STPSC12H065C datasheet by STMicroelectronics.
| Part number | STPSC12H065C |
|---|---|
| Datasheet | STPSC12H065C-STMicroelectronics.pdf |
| File Size | 98.49 KB |
| Manufacturer | STMicroelectronics |
| Description | power Schottky silicon carbide diode |
|
|
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC12H065 | 650V power Schottky silicon carbide diode |
| STPSC12065 | 650V power Schottky silicon carbide diode |
| STPSC12065-Y | Automotive 650V 12A silicon carbide power Schottky diode |
| STPSC12C065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
