STPSC12H065C Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC12H065C Key Features
- No or negligible reverse recovery
- High forward surge capability
- ECOPACK®2 pliant ponent
- production data
- 1------------Rthj
- 65 to +175 -40 to +175
- 2.4 1.275 0.15
- To evaluate the conduction losses use the following equation