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STPSC12H065C - power Schottky silicon carbide diode

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Part number STPSC12H065C
Manufacturer STMicroelectronics
File Size 98.49 KB
Description power Schottky silicon carbide diode
Datasheet download datasheet STPSC12H065C Datasheet
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Product details

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

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