STMicroelectronics STPSC12H065C
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC12H065C |
|---|---|
| Datasheet | STPSC12H065C Download |
| Manufacturer |  STMicroelectronics |
| Description | power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● High forward surge capability
● ECOPACK®2 compliant component Datasheet - production data
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) 2x6A 650 V 175 °C December 2015 This is information on a product in full production. DocID024809 Rev 3 1/8 Characteristics 1 Characteristics STPSC12H065C Table 2. Absolute ratings (limiting values per diode at 25 °C unless oth...
