STPSC12H065C
STPSC12H065C is power Schottky silicon carbide diode manufactured by STMicroelectronics.
650 V power Schottky silicon carbide diode
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Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK®2 pliant ponent
- production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially...
