Download STPSC12H065 Datasheet PDF
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STPSC12H065 Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

STPSC12H065 Key Features

  • No or negligible reverse recovery
  • Dedicated to PFC