Datasheet Details
| Part number | STPSC12H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 99.72 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC12H065-STMicroelectronics.pdf |
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Overview: STPSC12H065 650 V power Schottky silicon carbide diode $. . 72$& $ .
| Part number | STPSC12H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 99.72 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC12H065-STMicroelectronics.pdf |
|
|
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
| Part Number | Description |
|---|---|
| STPSC12H065C | power Schottky silicon carbide diode |
| STPSC12065 | 650V power Schottky silicon carbide diode |
| STPSC12065-Y | Automotive 650V 12A silicon carbide power Schottky diode |
| STPSC12C065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |