STMicroelectronics STPSC1206
This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. The recovery characteristics are independent of the temperature.| Part No. | STPSC1206 |
|---|---|
| Datasheet | STPSC1206 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
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● No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
DESCRIPTION
These diodes are manufactured using silicon carbide substrate. Such diodes exhibit no or negligible recovery characteristics. Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions. K A TO-220AC STPSC1206D Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 12 A 600 V 175 °C 12 nC September 2009 Doc ID 16288 Rev 1 1/7 7 Characteristics STPSC1206 1 Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Characteristics Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperatu...
