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STS12NH3LL - N-CHANNEL PowerMESH MOSFET

General Description

The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology.

An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters.

Key Features

  • TYPE STS12NH3LL s s s s s Figure 1: Package RDS(on) < 0.0105 Ω ID 12 A VDSS 30 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STS12NH3LL s s s s s Figure 1: Package RDS(on) < 0.0105 Ω ID 12 A VDSS 30 V TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE LOW INPUT CAPACITANCE SO-8 DESCRIPTION The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications.