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STS17NF3LL
N-channel 30V - 0.0045Ω - 17A - SO-8 STripFET™ II Power MOSFET for DC-DC conversion
General features
Type
VDSS
RDS(on)
ID
STS17NF3LL
30V
<0.0055Ω 17A
t(s) ■ Optimal RDS(on) x Qg trade-off @ 4.5V
■ Conduction losses reduced
uc ■ Switching losses reduced
Prod t(s) Description te c This application specific Power MOSFET is the le u second generation of STMicroelectronis unique d "Single Feature Size™" strip-based process. The so ro resulting transistor shows the best trade-off b P between on-resistance and gate charge. Such - O te features make it the best choice in high efficiency ) le DC-DC converters for Telecom and computer
industries.