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N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET
PRELIMINARY DATA TYPE STS1HNC60
s s s s s
STS1HNC60
VDSS 600 V
RDS(on) <8Ω
ID 0.36 A
TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8
DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STS1HNC60 Datasheet
