STS1HNC60 Datasheet | STMicroelectronics

N-CHANNEL 600V - 7Ω - 0.4A SO-8 Power Mesh™II MOSFET PRELIMINARY DATA TYPE STS1HNC60 s s s s s VDSS 600 V RDS(on) <8Ω ID 0.36 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCH MODE LOW POWER SUPPIES (SMPS) s...