STS1NC60 Datasheet | STMicroelectronics

N-CHANNEL 600V - 12Ω - 0.3A - SO-8 Power MESH™II MOSFET TYPE STS1NC60 s s s s s VDSS 600 V RDS(on) < 15 Ω ID 0.3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS)...