Datasheet4U Logo Datasheet4U.com

STSJ25NF3LL - N-CHANNEL POWER MOSFET

Description

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower R thj-c.

📥 Download Datasheet

Datasheet preview – STSJ25NF3LL

Datasheet Details

Part number STSJ25NF3LL
Manufacturer STMicroelectronics
File Size 312.48 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STSJ25NF3LL Datasheet
Additional preview pages of the STSJ25NF3LL datasheet.

📁 Similar Datasheet

  • STSJ80N4LLF3 - N-channel Power MOSFET (STMicroelectronics)
  • STS-2308-01 - DYNAMIC MICRO SPEAKER (STAR ACOUSTICS)
  • STS-8857 - Transmissive Switch Assembly (Silonex)
  • STS100 - Multifunction Telecommunications Switch (Solid State Optronic)
  • STS10100S - TRENCH SCHOTTKY BARRIER DIODE (JILIN SINO)
  • STS10P3LLH6 - P-channel Power MOSFET (STMicroelectronics)
  • STS10P4LLF6 - P-Channel Power MOSFET (STMicroelectronics)
  • STS10PF30L - P-CHANNEL POWER MOSFET (STMicroelectronics)
  • STS10T06 - Low Vf Schottky Diode (STANSON)
  • STS123 - NPN Silicon Transistor (AUK)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STSJ25NF3LL N-CHANNEL 30V - 0.0085 Ω - 25A PowerSO-8™ LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STSJ25NF3LL s s s s s VDSS 30 V RDS(on) <0.0105 Ω ID 25 A TYPICAL RDS(on) = 0.0085 Ω @ 10V TYPICAL Qg = 24 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8™ DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower R thj-c.
Published: |